![]() LH1550AAB1TR : 1 Form a High-voltage Solid State Relay Some Part number from the same manufacture Vishay IntertechnologyīCM 15 X 15 Ta2 N Back-contact on SiliconīCP 22 X 22 Ta2 N Back-contact on Silicon With Part MarkīCR 20 X 20 Ta2 N Back-contact on SiliconīF961 N-channel Dual Gate MOS‐fieldeffect Tetrode, Depletion Mode ![]() Ratings and Characteristic Curves (TA = 25☌ unless otherwise noted) Gain-Bandwidth Product Collector-Base Capacitance Emitter-Base Capacitance Noise Figure BC547 BC548 Note: (1) Valid provided that leads are kept at ambient temperature at a distance 2 mm from case.Ĭollector Saturation Voltage Base Saturation Voltage Base-Emitter Voltage Thermal Resistance Junction to Ambient Air Junction Temperature Storage Temperature Range Ratings at 25☌ ambient temperature unless otherwise specified.Įmitter-Base Voltage Collector Current Peak Collector Current Peak Base Current Peak Emitter Current Power Dissipation at Tamb = 25☌ 0.18g Packaging Codes/Options: 5K per container, 20K/box E7/4K per Ammo mag., 20K/box On special request, these transistors are also manufactured in the pin configuration TO-18.Ĭase: TO-92 Plastic Package Weight: approx. As complementary types the PNP transistors BC556.BC558 are recommended. The type BC546 is available in groups A and B, however, the types BC547 and BC548 can be supplied in all three groups. ![]() NPN Silicon Epitaxial Planar Transistors These transistors are subdivided into three groups A, B, and C according to their current gain. ![]()
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